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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology CT16G4SFD824A.C16FE 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology CT16G4SFD824A.C16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
13.3
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
38
65
左右 -71% 更低的延时
更快的写入速度,GB/s
10.7
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
38
读取速度,GB/s
3,580.8
13.3
写入速度,GB/s
1,592.0
10.7
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2277
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BL32G32C16U4W.M16FB1 32GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Samsung M378B1G73EB0-CK0 8GB
Apacer Technology GD2.11173T.001 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KYXC0V-MIB 16GB
Kingston 99U5428-101.A00LF 8GB
Transcend Information TS1GSH64V4B 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMD32GX4M4B2800C14 8GB
AMD R538G1601U2S-UO 8GB
Avant Technology W641GU42J5213NC 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-8GVK 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3466C16-16GTZR 16GB
Samsung M471B5273DH0-CK0 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Samsung 1600 CL10 Series 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
报告一个错误
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