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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology CT4G4SFS8266.C8FE 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology CT4G4SFS8266.C8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
低于PassMark测试中的延时,ns
65
166
左右 61% 更低的延时
更快的读取速度,GB/s
3
14.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS8266.C8FE 4GB
报告一个错误
更快的写入速度,GB/s
8.1
1,592.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
166
读取速度,GB/s
3,580.8
14.7
写入速度,GB/s
1,592.0
8.1
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
572
1107
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT4G4SFS8266.C8FE 4GB
Kingston 99U5474-037.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston HP26D4U9S1ME-4 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Samsung M378A1K43DB2-CVF 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFS632A 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Samsung M471B5673FH0-CF8 2GB
V-GEN D4R8GL24A8R 8GB
A-DATA Technology DDR4 2400 16GB
Golden Empire CL16-18-18 D4-3000 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3600C19-16GSXWB 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905678-102.A00G 8GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A5244CB0-CTD 4GB
报告一个错误
×
Bug description
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