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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology CT8G4SFD8213.M16FB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology CT8G4SFD8213.M16FB 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
15.5
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFD8213.M16FB 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
65
左右 -141% 更低的延时
更快的写入速度,GB/s
12.1
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
27
读取速度,GB/s
3,580.8
15.5
写入速度,GB/s
1,592.0
12.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
2628
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB RAM的比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
ASint Technology SSA302G08-EGN1C 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4SFD8213.M16FB 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C17-16GTZR 16GB
Apacer Technology 78.01G86.9H50C 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Transcend Information TS1GLH64V4B 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A5644EB0-CPB 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMSX32GX4M2A3000C16 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Kingston KHX8500D2K2/2GN 1GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
报告一个错误
×
Bug description
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