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Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-4000C16-16GTZRA 16GB

总分
star star star star star
Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分
star star star star star
G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

差异 规格 评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB 需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 18% 更低的延时
G Skill Intl F4-4000C16-16GTZRA 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GTZRA 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.9 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.4 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 28
  • 读取速度，GB/s
    11.6 left arrow 20.9
  • 写入速度，GB/s
    5.6 left arrow 17.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1751 left arrow 3963

Ramos Technology RMB4GB58BCA3-13HC 4GB RAM的比较

Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB

G Skill Intl F4-4000C16-16GTZRA 16GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J642GU42J7240N4 16GB
Avant Technology J642GU42J7240N4 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Vasekey M378A1K43BB2-CPB 8GB
Vasekey M378A1K43BB2-CPB 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
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Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3333C16-8GVR 8GB
G Skill Intl F4-3333C16-8GVR 8GB
内存RAM
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-4000C17-8GVKB 8GB
G Skill Intl F4-4000C17-8GVKB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
内存RAM