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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology CT8G4SFS8213.C8FAD1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
14.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
65
左右 -141% 更低的延时
更快的写入速度,GB/s
10.6
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
27
读取速度,GB/s
3,580.8
14.4
写入速度,GB/s
1,592.0
10.6
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
2509
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C14-16GFX 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMD16GX4M4C3200C15 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Kingston DDR3 1333G 2GB
A-DATA Technology DDR3 1866 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMD64GX4M8X4000C19 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3000C15-8GVKB 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Mushkin 99[2/7/4]208F 8GB
Kingston 99U5429-007.A00LF 2GB
Kingston 9905630-048.A00G 16GB
Samsung M393B2G70BH0-CH9 16GB
Avant Technology J641GU48J5213NG 8GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. Team-Elite-1333 4GB
Kingston KHX2400C14S4/8G 8GB
报告一个错误
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Bug description
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