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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C17-16GIS 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-2400C17-16GIS 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
G Skill Intl F4-2400C17-16GIS 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
低于PassMark测试中的延时,ns
31
65
左右 -110% 更低的延时
更快的写入速度,GB/s
9.8
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
31
读取速度,GB/s
3,580.8
16.7
写入速度,GB/s
1,592.0
9.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2888
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-2400C17-16GIS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C17-16GIS 16GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-GEN D4H8GS24A8 8GB
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Avant Technology J641GU42J5213N0 8GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA82GU7MFR8N-TF 16GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
报告一个错误
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Bug description
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