Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Kllisre D4 8G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 11.7

测试中的平均数值

Kllisre D4 8G 8GB

需要考虑的原因
Kllisre D4 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 65

左右 -38% 更低的延时
更快的写入速度，GB/s

6.7 1,592.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Kllisre D4 8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 47
读取速度，GB/s

3,580.8 11.7
写入速度，GB/s

1,592.0 6.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

572 2143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Kingston 9905665-020.A00G 4GB

Kingston 9905665-020.A00G 4GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB