Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung M471A5244CB0-CTD 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 65

左右 -67% 更低的延时
更快的写入速度，GB/s

11.5 1,592.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Samsung M471A5244CB0-CTD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 39
读取速度，GB/s

3,580.8 15.5
写入速度，GB/s

1,592.0 11.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

572 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M4X1866C9 4GB

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AMD R538G1601U2S 8GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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G Skill Intl F3-1600C11-4GIS 4GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB