Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Shenzhen Technology Co Ltd 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Shenzhen Technology Co Ltd 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Shenzhen Technology Co Ltd 8GB

需要考虑的原因
Shenzhen Technology Co Ltd 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 65

左右 -103% 更低的延时
更快的写入速度，GB/s

11.9 1,592.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Shenzhen Technology Co Ltd 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 32
读取速度，GB/s

3,580.8 15.9
写入速度，GB/s

1,592.0 11.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

572 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

SK Hynix HMA42GR7MFR4N-TFTD 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB