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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 3300 2OZ 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology DDR4 3300 2OZ 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
A-DATA Technology DDR4 3300 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
17
24
左右 -41% 更低的延时
更快的读取速度,GB/s
22
16
测试中的平均数值
更快的写入速度,GB/s
17.0
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 3300 2OZ 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
17
读取速度,GB/s
16.0
22.0
写入速度,GB/s
12.5
17.0
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
3731
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology DDR4 3300 2OZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F4-3000C15-8GVKB 8GB
Corsair CMD16GX4M4B2133C10 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3300 2OZ 4GB
Kingston KHX318C10FR/8G 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Kingston 9905584-016.A00LF 4GB
Corsair CMD8GX4M2B3000C15 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMW64GX4M4K3600C18 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-2400C17-8GDBVR 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2400C15-4GRB 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
Samsung M471B5173DB0-YK0 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Kingston 9905403-444.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Samsung M3 93T5750CZA-CE6 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
报告一个错误
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Bug description
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