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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD R744G2400U1S 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs AMD R744G2400U1S 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.5 left arrow 11.6
    测试中的平均数值
AMD R744G2400U1S 4GB 需要考虑的原因
AMD R744G2400U1S 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 24
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 16
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD R744G2400U1S 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 22
  • 读取速度，GB/s
    16.0 left arrow 16.7
  • 写入速度，GB/s
    12.5 left arrow 11.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2862

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

AMD R744G2400U1S 4GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KHX2133C14D4/8G 8GB
Kingston KHX2133C14D4/8G 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CM4X16GC3000C16K4D 16GB
Corsair CM4X16GC3000C16K4D 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston KY7N41-MID 8GB
Kingston KY7N41-MID 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Transcend Information JM3200HLB-16G 16GB
Transcend Information JM3200HLB-16G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP32D4U2S1ME-8 8GB
Kingston HP32D4U2S1ME-8 8GB
内存RAM