RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology W642GU42J7240N8 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avant Technology W642GU42J7240N8 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Avant Technology W642GU42J7240N8 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 8% 更低的延时
需要考虑的原因
Avant Technology W642GU42J7240N8 16GB
报告一个错误
更快的读取速度,GB/s
16.3
16
测试中的平均数值
更快的写入速度,GB/s
13.4
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology W642GU42J7240N8 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
26
读取速度,GB/s
16.0
16.3
写入速度,GB/s
12.5
13.4
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
3132
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avant Technology W642GU42J7240N8 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W642GU42J7240N8 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGPN.DF40B 8GB
Samsung M471B5674QH0-YK0 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GRR 8GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3000C14-8GTZR 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905624-013.A00G 8GB
Samsung M378B5773CH0-CH9 2GB
Kingston 99U5700-014.A00G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
A-DATA Technology DDR3 1333G 2GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Unifosa Corporation GU502203EP0201 1GB
SK Hynix GKE800SO51208-2133AH 8GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology DDR4 2133 2OZ 8GB
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
报告一个错误
×
Bug description
Source link