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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMU32GX4M4A2666C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMU32GX4M4A2666C16 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Corsair CMU32GX4M4A2666C16 8GB

Corsair CMU32GX4M4A2666C16 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 14% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Corsair CMU32GX4M4A2666C16 8GB 需要考虑的原因
Corsair CMU32GX4M4A2666C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMU32GX4M4A2666C16 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 28
  • 读取速度，GB/s
    16.0 left arrow 17.7
  • 写入速度，GB/s
    12.5 left arrow 14.0
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3428

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Corsair CMU32GX4M4A2666C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR16GX4M2C3000C15 8GB
Corsair CMR16GX4M2C3000C15 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Unifosa Corporation GU342G0ALEPR692C6F 2GB
Unifosa Corporation GU342G0ALEPR692C6F 2GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C14-16GTZR 16GB
G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
内存RAM