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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CB8GS2400.C8ET 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CB8GS2400.C8ET 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 33
    左右 27% 更低的延时
Crucial Technology CB8GS2400.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8ET 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CB8GS2400.C8ET 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 33
  • 读取速度，GB/s
    16.0 left arrow 16.2
  • 写入速度，GB/s
    12.5 left arrow 12.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2941

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Crucial Technology CB8GS2400.C8ET 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F4-2800C16-4GVR 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Crucial Technology BLE4G4D32AEEA.K8FD 4GB
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Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Transcend Information JM2666HLB-16G 16GB
Transcend Information JM2666HLB-16G 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD42133C138G4NJK 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMD32GX4M2C3200C16 16GB
Corsair CMD32GX4M2C3200C16 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM