Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4DFRA266.C8FB 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 35

左右 31% 更低的延时

Crucial Technology CT16G4DFRA266.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FB 16GB

报告一个错误

更快的读取速度，GB/s

16.2 16

测试中的平均数值
更快的写入速度，GB/s

13.2 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 35
读取速度，GB/s

16.0 16.2
写入速度，GB/s

12.5 13.2
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 3299

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMD32GX4M4B2800C14 8GB

Corsair CMD32GX4M4B2800C14 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB