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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT4G4DFS8266.M8FG 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology CT4G4DFS8266.M8FG 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
71
左右 66% 更低的延时
更快的读取速度,GB/s
16
15.4
测试中的平均数值
更快的写入速度,GB/s
12.5
8.0
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4DFS8266.M8FG 4GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
71
读取速度,GB/s
16.0
15.4
写入速度,GB/s
12.5
8.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
1586
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT4G4DFS8266.M8FG 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Samsung M471B5773DH0-CH9 2GB
Samsung M393A1G40EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8266.M8FG 4GB
Kingston 9965525-144.A00LF 8GB
Samsung M393A2K43BB1-CPB 16GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2666C18-8GFT 8GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Wilk Elektronik S.A. W-HK26S16G 16GB
A-DATA Technology DQVE1908 512MB
Kingston 9905700-025.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Kingston ACR256X64D3S1333C9 2GB
Panram International Corporation W4U3200PS-16G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2800C15-8GVR 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Kingston KVR16N11/8-SP 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
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