RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFD8213.16FA11 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology CT8G4DFD8213.16FA11 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 8% 更低的延时
更快的读取速度,GB/s
16
15.5
测试中的平均数值
更快的写入速度,GB/s
12.5
11.3
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Crucial Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
26
读取速度,GB/s
16.0
15.5
写入速度,GB/s
12.5
11.3
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2780
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4DFD8213.16FA11 8GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD8213.16FA11 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK192GX4M12P3200C16 16GB
Kingston 99U5458-008.A00LF 4GB
Team Group Inc. DDR4 2666 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMSO16GX4M1A2133C15 16GB
Kingston 99U5403-036.A00G 4GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M392B1K70CM0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2666C18-8GFT 8GB
Kingston 9965516-112.A00LF 16GB
Corsair CMD64GX4M4C3200C16 16GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1G43EB1-CRC 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-4000C18-16GTRS 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMV4GX4M1A2666C18 4GB
报告一个错误
×
Bug description
Source link