Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFD8213.C16FBR2 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 32

左右 25% 更低的延时
更快的写入速度，GB/s

12.5 11.4

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBR2 8GB

报告一个错误

更快的读取速度，GB/s

17.1 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 32
读取速度，GB/s

16.0 17.1
写入速度，GB/s

12.5 11.4
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMK8GX4M1Z3600C18 8GB

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Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

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Patriot Memory (PDP Systems) 4400 C19 Series 8GB

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Micron Technology AFLD48VH1P 8GB

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Team Group Inc. Vulcan-1600 4GB

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G Skill Intl F4-2133C15-16GRS 16GB

G Skill Intl F4-2133C15-16GRS 16GB