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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GFX 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2133C15-8GFX 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2133C15-8GFX 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的写入速度,GB/s
12.5
11.4
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2133C15-8GFX 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
24
左右 -4% 更低的延时
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-8GFX 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
23
读取速度,GB/s
16.0
16.0
写入速度,GB/s
12.5
11.4
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2816
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2133C15-8GFX 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-8GFX 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4000C16-16GTZR 16GB
Corsair CML16GX3M2A1600C10 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Kingston KTC1G-UDIMM 1GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMD16GX4M4B2400C10 4GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3200C16-4GRK 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-16GFX 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix MMA82GS6CJR8N-VK 16GB
AMD AE34G2139U2 4GB
Samsung M471A1A43DB0-CPB 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
报告一个错误
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Bug description
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