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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-16GVR 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C15-16GVR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3000C15-16GVR 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3000C15-16GVR 16GB
报告一个错误
更快的读取速度,GB/s
17.5
16
测试中的平均数值
更快的写入速度,GB/s
14.2
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-16GVR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
17.5
写入速度,GB/s
12.5
14.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3520
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
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G Skill Intl F4-3000C15-16GVR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-16GVR 16GB
PNY Electronics PNY 2GB
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Kingston 9905403-011.A03LF 2GB
Kingston 9905624-033.A00G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905678-043.A00G 8GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 76.B305G.D500B 4GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905630-063.A00G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
A-DATA Technology DQKD1A08 1GB
Micron Technology AFSD416ES1P 16GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CMV4GX3M1B1600C11 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA81GU6CJR8N-XN 8GB
报告一个错误
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Bug description
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