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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-16GVR 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C15-16GVR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3000C15-16GVR 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3000C15-16GVR 16GB
报告一个错误
更快的读取速度,GB/s
17.5
16
测试中的平均数值
更快的写入速度,GB/s
14.2
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-16GVR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
17.5
写入速度,GB/s
12.5
14.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3520
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3000C15-16GVR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-4000C18-16GTZR 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-16GVR 16GB
Qimonda 72T128420EFA3SB2 1GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CM4X4GF2133C15S2 4GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X8GE2133C13K4 8GB
A-DATA Technology DDR3 1600 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-4400C17-8GVK 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CM4X8GF3000C15K4 8GB
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905316-106.A02LF 1GB
SK Hynix HMA82GU6DJR8N-VK 16GB
报告一个错误
×
Bug description
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