Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-16GTZSK 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 8% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3200C14-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZSK 16GB

报告一个错误

更快的读取速度，GB/s

19 16

测试中的平均数值
更快的写入速度，GB/s

17.1 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 26
读取速度，GB/s

16.0 19.0
写入速度，GB/s

12.5 17.1
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 4022

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMT32GX4M2E3200C16 16GB

Corsair CMT32GX4M2E3200C16 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB