Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-4266C19-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4266C19-8GTRS 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-4266C19-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 24

左右 -4% 更低的延时
更快的读取速度，GB/s

19.6 16

测试中的平均数值
更快的写入速度，GB/s

17.6 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-4266C19-8GTRS 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 23
读取速度，GB/s

16.0 19.6
写入速度，GB/s

12.5 17.6
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 4100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C

Kingston KHX2133C11S3L/4G 4GB

Kingston KHX2133C11S3L/4G 4GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB