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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 4% 更低的延时
更快的读取速度,GB/s
16
14.2
测试中的平均数值
更快的写入速度,GB/s
12.5
7.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
25
读取速度,GB/s
16.0
14.2
写入速度,GB/s
12.5
7.4
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2104
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Mushkin 99[2/7/4]205F 8GB
Kingston 9905469-143.A00LF 4GB
Mushkin 99[2/7/4]198F 8GB
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Corsair CMD16GX4M4A2666C16 4GB
报告一个错误
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