Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 4400 C19 Series 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 4% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C19 Series 8GB

报告一个错误

更快的读取速度，GB/s

19.5 16

测试中的平均数值
更快的写入速度，GB/s

17.8 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 25
读取速度，GB/s

16.0 19.5
写入速度，GB/s

12.5 17.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 3910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Kllisre 0000 8GB

Kllisre 0000 8GB