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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K40CB1-CRC 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M393A2K40CB1-CRC 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M393A2K40CB1-CRC 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
45
左右 47% 更低的延时
更快的读取速度,GB/s
16
10.7
测试中的平均数值
更快的写入速度,GB/s
12.5
6.5
测试中的平均数值
需要考虑的原因
Samsung M393A2K40CB1-CRC 16GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K40CB1-CRC 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
45
读取速度,GB/s
16.0
10.7
写入速度,GB/s
12.5
6.5
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2142
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M393A2K40CB1-CRC 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CM4X16GE2666C18S2 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2K40CB1-CRC 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905701-141.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMD64GX4M4C3000C15 16GB
Kingston KVR533D2N4 512MB
Panram International Corporation W4U2666P-8G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Mushkin 99[2/7/4]202F 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
V-GEN D4S8GL32A8TS 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C18-32GVK 32GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Samsung M393B1K70CH0-YH9 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-8GTZN 8GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
A-DATA Technology DQVE1908 512MB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Super Talent F24SB8GH 8GB
报告一个错误
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Bug description
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