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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenzhen Technology Co Ltd 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shenzhen Technology Co Ltd 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 32
    左右 25% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 11.9
    测试中的平均数值
Shenzhen Technology Co Ltd 8GB 需要考虑的原因
Shenzhen Technology Co Ltd 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenzhen Technology Co Ltd 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 32
  • 读取速度，GB/s
    16.0 left arrow 15.9
  • 写入速度，GB/s
    12.5 left arrow 11.9
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2831

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Shenzhen Technology Co Ltd 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
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Ramaxel Technology RMT3020EC58E9F1333 4GB
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Team Group Inc. TEAMGROUP-UD4-3866 8GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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G Skill Intl F4-3200C14-32GVK 32GB
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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
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Samsung 1600 CL10 Series 8GB
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Samsung M393B1G70BH0-CK0 8GB
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Kingston ACR256X64D3S1333C9 2GB
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Hexon Technology Pte Ltd HEXON 1GB
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Kingston 9965600-033.A00G 16GB
内存RAM
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Samsung M471B5273EB0-CK0 4GB
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G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMSX8GX4M2A2400C16 4GB
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PNY Electronics PNY 2GB
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Crucial Technology BLS8G4D32AESTK.M8FE 8GB
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Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
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