Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Transcend Information JM2400HSB-8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Transcend Information JM2400HSB-8G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时
更快的读取速度，GB/s

16 13.9

测试中的平均数值
更快的写入速度，GB/s

12.5 8.8

测试中的平均数值

Transcend Information JM2400HSB-8G 8GB

需要考虑的原因
Transcend Information JM2400HSB-8G 8GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Transcend Information JM2400HSB-8G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

16.0 13.9
写入速度，GB/s

12.5 8.8
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2186

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273DH0-CH9 4GB

Samsung M391B5273DH0-CH9 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

Patriot Memory (PDP Systems) PSD34G1600L81S 4GB

Patriot Memory (PDP Systems) PSD34G1600L81S 4GB

A-DATA Technology AM2L16BC4R1-B0PS 4GB

A-DATA Technology AM2L16BC4R1-B0PS 4GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB