Kingmax Semiconductor FLFE85F-C8KL9 2GB vs G Skill Intl F4-3200C14-16GTZKO 16GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

G Skill Intl F4-3200C14-16GTZKO 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZKO 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 -50% 更低的延时
更快的读取速度，GB/s

21.3 10.1

测试中的平均数值
更快的写入速度，GB/s

15.8 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-3200C14-16GTZKO 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 18
读取速度，GB/s

10.1 21.3
写入速度，GB/s

6.2 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

Avexir Technologies Corporation DDR3-1333 CL9 8GB

Avexir Technologies Corporation DDR3-1333 CL9 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-3200C14-16GTZKO 16GB

G Skill Intl F4-3200C14-16GTZKO 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4400C18-8GTZR 8GB

G Skill Intl F4-4400C18-8GTZR 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3866C18-4GTZ 4GB

G Skill Intl F4-3866C18-4GTZ 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Corsair CM4X16GC3000C15D4 16GB

Corsair CM4X16GC3000C15D4 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB