Kingmax Semiconductor FLFE85F-C8KL9 2GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

G Skill Intl F4-3200C15-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB

报告一个错误

更快的读取速度，GB/s

11.8 10.1

测试中的平均数值
更快的写入速度，GB/s

10.0 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-3200C15-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

10.1 11.8
写入速度，GB/s

6.2 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GR7MFR4N-TFTD 8GB

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Samsung M471A5244CB0-CWE 4GB

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Corsair CM4X16GE2666C18S2 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMD8GX4M2B3466C18 4GB

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SpecTek Incorporated PSD34G13332 4GB

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Micron Technology 4ATF51264HZ-3G2J1 4GB

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Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB