Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Micron Technology 4ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB

报告一个错误

更快的读取速度，GB/s

16.7 10.1

测试中的平均数值
更快的写入速度，GB/s

10.9 6.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

10.1 16.7
写入速度，GB/s

6.2 10.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1411 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Hyundai Inc GP-GR26C16S8K1HU408 8GB

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Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Corsair CMK8GX4M2B4266C19 4GB

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Crucial Technology CT8G4SFS8213.C8FH1 8GB

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Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Mushkin 991586 2GB

Mushkin 991586 2GB

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Crucial Technology BLM16G40C18U4BL.M8FB 16GB

Crucial Technology BLM16G40C18U4BL.M8FB 16GB