Kingmax Semiconductor FLFE85F-C8KL9 2GB

Panram International Corporation PUD42133C138G4NJK 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Panram International Corporation PUD42133C138G4NJK 8GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 74

左右 64% 更低的延时

Panram International Corporation PUD42133C138G4NJK 8GB

需要考虑的原因
Panram International Corporation PUD42133C138G4NJK 8GB

报告一个错误

更快的读取速度，GB/s

14.9 10.1

测试中的平均数值
更快的写入速度，GB/s

9.0 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Panram International Corporation PUD42133C138G4NJK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 74
读取速度，GB/s

10.1 14.9
写入速度，GB/s

6.2 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 1925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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Crucial Technology CT4G4SFS8213.C8FDD2 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Gloway International (HK) STKD4GAM2133-F 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 36ADS2G72PZ-2G1A1 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB