Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Patriot Memory (PDP Systems) 3600 C20 Series 8GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

报告一个错误

更快的读取速度，GB/s

20.1 10.1

测试中的平均数值
更快的写入速度，GB/s

16.3 6.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

10.1 20.1
写入速度，GB/s

6.2 16.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1411 3796

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMN32GX4M2Z3200C16 16GB

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G Skill Intl F4-2400C16-8GRSB 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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Avant Technology W6451U67J7240NB 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Wilk Elektronik S.A. GR2666D464L19/16G 16GB