Kingmax Semiconductor FLFE85F-C8KM9 2GB vs G Skill Intl F4-4000C18-16GTZN 16GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

G Skill Intl F4-4000C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTZN 16GB

报告一个错误

更快的读取速度，GB/s

20.1 11.9

测试中的平均数值
更快的写入速度，GB/s

16.4 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-4000C18-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

11.9 20.1
写入速度，GB/s

7.6 16.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1610 3823

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF1G64AZ-1G6E1 8GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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AMD R538G1601U2S 8GB

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB