Kingmax Semiconductor FLFE85F-C8KM9 2GB vs G Skill Intl F4-4800C18-8GTRG 8GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

G Skill Intl F4-4800C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4800C18-8GTRG 8GB

报告一个错误

更快的读取速度，GB/s

16.7 11.9

测试中的平均数值
更快的写入速度，GB/s

15.4 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-4800C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

11.9 16.7
写入速度，GB/s

7.6 15.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1610 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-001.A01LF 2GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston 9905403-437.A01LF 4GB

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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Corsair CMD32GX4M2C3200C14T 16GB

Kingston 99U5584-005.A00LF 4GB

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Kingston 9965525-140.A00LF 8GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Crucial Technology BL32G36C16U4B.M16FB1 32GB

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Kingston KHX2133C11D3/4GX 4GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB