Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Lexar Co Limited LD4AS008G-H2666GST 8GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Lexar Co Limited LD4AS008G-H2666GST 8GB

需要考虑的原因
Lexar Co Limited LD4AS008G-H2666GST 8GB

报告一个错误

更快的读取速度，GB/s

15.8 11.9

测试中的平均数值
更快的写入速度，GB/s

10.2 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

11.9 15.8
写入速度，GB/s

7.6 10.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1610 2708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M471A1K43BB1-CTD 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Mushkin 991679ES 996679ES 2GB

Kingston 9905624-022.A00G 8GB

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