Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Samsung M393A2G40EB2-CTD 16GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 41% 更低的延时
更快的读取速度，GB/s

11.9 8.5

测试中的平均数值
更快的写入速度，GB/s

7.6 5.6

测试中的平均数值

Samsung M393A2G40EB2-CTD 16GB

需要考虑的原因
Samsung M393A2G40EB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung M393A2G40EB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 44
读取速度，GB/s

11.9 8.5
写入速度，GB/s

7.6 5.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1610 1660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT8G4D26AFTA.16FBD 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Kingston HP698651-154-MCN 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73DM0-YK0 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 99U5704-001.A00G 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB