Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Kingston KVR800D2N6/2G 2GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 61

左右 -22% 更低的延时
更快的读取速度，GB/s

5 3

测试中的平均数值
更快的写入速度，GB/s

1,905.1 1,670.4

测试中的平均数值

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingston KVR800D2N6/2G 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

61 50
读取速度，GB/s

3,529.3 5,143.3
写入速度，GB/s

1,670.4 1,905.1
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

517 855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD832A.M16FJ 16GB

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Corsair CMK64GX4M4B2800C14 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingston 9905743-045.A00G 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology BL8G30C15U4R.8FE 8GB

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Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Asgard VMA45UH-MEC1U2AW2 16GB

Asgard VMA45UH-MEC1U2AW2 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

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Apacer Technology D12.2755BS.001 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Kingston KCRXJ6-MIE 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB