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Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M391A1K43BB1-CRC 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Samsung M391A1K43BB1-CRC 8GB

总分
star star star star star
Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分
star star star star star
Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

差异 规格 评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB 需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12
    测试中的平均数值
Samsung M391A1K43BB1-CRC 8GB 需要考虑的原因
Samsung M391A1K43BB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 61
    左右 -135% 更低的延时
  • 更快的写入速度，GB/s
    5.5 left arrow 1,670.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M391A1K43BB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 26
  • 读取速度，GB/s
    3,529.3 left arrow 12.0
  • 写入速度，GB/s
    1,670.4 left arrow 5.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    517 left arrow 1925

Kingmax Semiconductor KLDD48F-B8KU5 1GB RAM的比较

Kingmax Semiconductor KLDD48F-A8KB5 1GB
Patriot Memory (PDP Systems) PSD21G800816 1GB

Samsung M391A1K43BB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M391A1K43BB1-CRC 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F4-3200C16-8GSX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C16-16GIS 16GB
G Skill Intl F4-3200C16-16GIS 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965596-029.B00G 4GB
Kingston 9965596-029.B00G 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM