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Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB

Kingston 2GB-DDR2 800Mhz 2GB vs Crucial Technology BLS4G4D26BFSE.8FE 4GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 20.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,160.7 left arrow 14.8
    测试中的平均数值
Crucial Technology BLS4G4D26BFSE.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 43
    左右 -126% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 19
  • 读取速度，GB/s
    5,987.5 left arrow 20.4
  • 写入速度，GB/s
    2,160.7 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    957 left arrow 3066

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Samsung M471B5173QH0-YK0 4GB
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内存RAM
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内存RAM
AMD AE34G1601U1 4GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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