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Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB

Kingston 2GB-DDR2 800Mhz 2GB vs Crucial Technology CT4G4DFS824A.C8FE 4GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 72
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 15.6
    测试中的平均数值
Crucial Technology CT4G4DFS824A.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FE 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 2,160.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 72
  • 读取速度，GB/s
    5,987.5 left arrow 15.6
  • 写入速度，GB/s
    2,160.7 left arrow 8.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    957 left arrow 1728

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
内存RAM
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905701-021.A00G 16GB
Kingston 9905701-021.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
Kingston 9965525-010.A00LF 4GB
Kingston 9965525-010.A00LF 4GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM