Kingston 2GB-DDR2 800Mhz 2GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 16.2

测试中的平均数值
更快的写入速度，GB/s

2,160.7 12.7

测试中的平均数值

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 43

左右 -65% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 26
读取速度，GB/s

5,987.5 16.2
写入速度，GB/s

2,160.7 12.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

957 2728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5173BH0-CH9 4GB

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G Skill Intl F4-2666C15-4GRR 4GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

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Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB