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Kingston 2GB-DDR2 800Mhz 2GB
Kingston HP32D4U2S8MR-8 8GB

Kingston 2GB-DDR2 800Mhz 2GB vs Kingston HP32D4U2S8MR-8 8GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Kingston HP32D4U2S8MR-8 8GB

Kingston HP32D4U2S8MR-8 8GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 20.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,160.7 left arrow 14.6
    测试中的平均数值
Kingston HP32D4U2S8MR-8 8GB 需要考虑的原因
Kingston HP32D4U2S8MR-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 43
    左右 -16% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Kingston HP32D4U2S8MR-8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 37
  • 读取速度，GB/s
    5,987.5 left arrow 20.3
  • 写入速度，GB/s
    2,160.7 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    957 left arrow 3235

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Kingston HP32D4U2S8MR-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Essencore Limited KD4AGS88C-32N220D 16GB
Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4000C15-8GTRG 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2133C15-4GVK 4GB
G Skill Intl F4-2133C15-4GVK 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
Corsair CMK8GX4M2A2666C16 4GB
Corsair CMK8GX4M2A2666C16 4GB
内存RAM