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Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Kingston 2GB-DDR2 800Mhz 2GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,160.7 left arrow 10.7
    测试中的平均数值
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 43
    左右 -72% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 25
  • 读取速度，GB/s
    5,987.5 left arrow 14.3
  • 写入速度，GB/s
    2,160.7 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    957 left arrow 2583

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BL16G26C16U4W.16FD 16GB
Crucial Technology BL16G26C16U4W.16FD 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M378A1K43BB2-CRC 8GB
Samsung M378A1K43BB2-CRC 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
内存RAM