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Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) PSD416G32002 16GB

Kingston 2GB-DDR2 800Mhz 2GB vs Patriot Memory (PDP Systems) PSD416G32002 16GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,160.7 left arrow 14.3
    测试中的平均数值
Patriot Memory (PDP Systems) PSD416G32002 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G32002 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 43
    左右 -26% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 34
  • 读取速度，GB/s
    5,987.5 left arrow 18.0
  • 写入速度，GB/s
    2,160.7 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    957 left arrow 3448

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Patriot Memory (PDP Systems) PSD416G32002 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
AMD R7S48G2400U2S 8GB
AMD R7S48G2400U2S 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Transcend Information JM3200HLE-32GK 16GB
Transcend Information JM3200HLE-32GK 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C15-8GTZR 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMSX4GX4M1A2400C16 4GB
Corsair CMSX4GX4M1A2400C16 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston MSI24D4S7S8S8-8 8GB
Kingston MSI24D4S7S8S8-8 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F4-3733C17-8GTZSW 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
内存RAM