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Kingston 2GB-DDR2 800Mhz 2GB
Teikon TMA851U6AFR6N-UHHC 4GB

Kingston 2GB-DDR2 800Mhz 2GB vs Teikon TMA851U6AFR6N-UHHC 4GB

总分
star star star star star
Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分
star star star star star
Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

差异 规格 评论

差异

Kingston 2GB-DDR2 800Mhz 2GB 需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 11.9
    测试中的平均数值
Teikon TMA851U6AFR6N-UHHC 4GB 需要考虑的原因
Teikon TMA851U6AFR6N-UHHC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 43
    左右 -34% 更低的延时
  • 更快的写入速度，GB/s
    8.7 left arrow 2,160.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Teikon TMA851U6AFR6N-UHHC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 32
  • 读取速度，GB/s
    5,987.5 left arrow 11.9
  • 写入速度，GB/s
    2,160.7 left arrow 8.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    957 left arrow 1875

Kingston 2GB-DDR2 800Mhz 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB

Teikon TMA851U6AFR6N-UHHC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-177.A00G 8GB
Kingston 9905678-177.A00G 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Apacer Technology GD2.2229BH.001 16GB
Apacer Technology GD2.2229BH.001 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Hewlett-Packard 7EH64AA# 8GB
Hewlett-Packard 7EH64AA# 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology W641GU42J9266NC 8GB
Avant Technology W641GU42J9266NC 8GB
内存RAM