Kingston 9905316-106.A02LF 1GB vs Corsair CMD16GX4M2K4133C19 8GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 19.9

测试中的平均数值
更快的写入速度，GB/s

2,475.5 18.0

测试中的平均数值

Corsair CMD16GX4M2K4133C19 8GB

需要考虑的原因
Corsair CMD16GX4M2K4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 56

左右 -195% 更低的延时
更高的内存带宽，mbps

17000 8800

左右 1.93 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Corsair CMD16GX4M2K4133C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 19
读取速度，GB/s

4,878.3 19.9
写入速度，GB/s

2,475.5 18.0
内存带宽，mbps

8800 17000

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

598 3691

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905316-106.A02LF 1GB

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Corsair CMD16GX4M2K4133C19 8GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

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Kingston KHX2400C12D4/16GX 16GB

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Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

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AMD R538G1601U2S 8GB

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Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMA81GS6AFR8N-UH 8GB

SK Hynix HMA81GS6AFR8N-UH 8GB