Kingston 9905316-106.A02LF 1GB vs G Skill Intl F4-3000C15-4GTZ 4GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值
更快的写入速度，GB/s

2,475.5 11.5

测试中的平均数值

G Skill Intl F4-3000C15-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 56

左右 -115% 更低的延时
更高的内存带宽，mbps

17000 8800

左右 1.93 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-3000C15-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 26
读取速度，GB/s

4,878.3 14.9
写入速度，GB/s

2,475.5 11.5
内存带宽，mbps

8800 17000

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

598 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2D3200C16 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

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Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-3000C15-4GTZ 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

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A-DATA Technology DDR3 1600 4GB

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Corsair CM4X16GE2400Z16K4 16GB