Kingston 9905316-106.A02LF 1GB vs Kingston KF3200C20S4/16GX 16GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,475.5 15.0

测试中的平均数值

Kingston KF3200C20S4/16GX 16GB

需要考虑的原因
Kingston KF3200C20S4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

48 56

左右 -17% 更低的延时
更高的内存带宽，mbps

25600 8800

左右 2.91 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Kingston KF3200C20S4/16GX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 48
读取速度，GB/s

4,878.3 16.6
写入速度，GB/s

2,475.5 15.0
内存带宽，mbps

8800 25600

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

598 2963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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G Skill Intl F4-2133C15-8GFX 8GB

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Kingston 9905316-106.A02LF 1GB

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Kingston KF3200C20S4/16GX 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Crucial Technology BL8G30C15U4WL.M8FE1 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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