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Kingston 9905316-106.A02LF 1GB
Micron Technology 4ATF51264AZ-2G3B1 4GB

Kingston 9905316-106.A02LF 1GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分
star star star star star
Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异 规格 评论

差异

Kingston 9905316-106.A02LF 1GB 需要考虑的原因
Kingston 9905316-106.A02LF 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,475.5 left arrow 11.2
    测试中的平均数值
Micron Technology 4ATF51264AZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 56
    左右 -65% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 8800
    左右 2.18 更高的带宽

规格

完整的技术规格清单
Kingston 9905316-106.A02LF 1GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 34
  • 读取速度，GB/s
    4,878.3 left arrow 15.6
  • 写入速度，GB/s
    2,475.5 left arrow 11.2
  • 内存带宽，mbps
    8800 left arrow 19200
Other
  • 描述
    PC2-8800, SSTL 1.8V, CAS Supported: 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    598 left arrow 2468

Kingston 9905316-106.A02LF 1GB RAM的比较

Elpida EBE11UD8AJWA-6E-E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
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Ramaxel Technology RMR5040ED58E9W1600 4GB
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Corsair CMK16GX4M2B3600C18 8GB
内存RAM
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
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A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Samsung M378A1K43CB2-CTD 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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SK Hynix HMAA4GS6AJR8N-VK 32GB
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Corsair CMK16GX4M1A2666C16 16GB
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Samsung DDR3 8GB 1600MHz 8GB
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Avant Technology J641GU42J5213N0 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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Kingston 9965662-016.A00G 16GB
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Corsair CMD32GX4M4B3333C16 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMW64GX4M4D3600C18 16GB
Corsair CMW64GX4M4D3600C18 16GB
内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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Kingston ACR26D4S9D8MD-16 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Essencore Limited KD4AGSA8A-32N2200 16GB
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