Kingston 9905316-106.A02LF 1GB vs Samsung M386A8K40CM2-CRC 64GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

Samsung M386A8K40CM2-CRC 64GB

需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB

报告一个错误

低于PassMark测试中的延时，ns

41 56

左右 -37% 更低的延时
更快的读取速度，GB/s

8.2 4

测试中的平均数值
更快的写入速度，GB/s

5.4 2,475.5

测试中的平均数值
更高的内存带宽，mbps

19200 8800

左右 2.18 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Samsung M386A8K40CM2-CRC 64GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 41
读取速度，GB/s

4,878.3 8.2
写入速度，GB/s

2,475.5 5.4
内存带宽，mbps

8800 19200

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

598 1704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingston 9965640-008.A01G 32GB

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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3333C16-4GRRD 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Transcend Information JM3200HLE-16G 16GB

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